SOL-GEL TIO2 FILMS ON SILICON SUBSTRATES

被引：102

作者：

VOROTILOV, KA

ORLOVA, EV

PETROVSKY, VI

机构：

[1] Moscow Institute of Radioengineering, Electronics and Automation, Moscow

来源：

THIN SOLID FILMS | 1992年 / 207卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90120-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Titanium dioxide (TiO2) thin films have been prepared on silicon substrates by the sol-gel method. The properties of the resultant films are process dependent. The effects of solution content (type of titanium alkoxide, type of solvent, equivalent oxide concentration, [H2O]/[Ti(OR)4] ratio), gas moisture during deposition and heat treatment temperature on the film properties is discussed. The X-ray diffraction spectra, optical and electrical properties and TiO2-Si interface quality have been studied.

引用

页码：180 / 184

页数：5

共 22 条

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