DEPENDENCE OF BARRIER HEIGHT OF METAL-SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER - COMMENT

被引：9

作者：

WEI, CH ^{[1
]}

YEE, SS ^{[1
]}

机构：

[1] UNIV WASHINGTON,DEPT ELECT ENGN,SEATTLE,WA 98195

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 02期

关键词：

D O I：

10.1063/1.1663356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：971 / 971

页数：1

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[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[2] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES
CROWELL, CR
SHORE, HB
LABATE, EE
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3843 - &
[3] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER
PRUNIAUX, BR
ADAMS, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1980 - &