A GAAS-MESFET SMALL-SIGNAL EQUIVALENT-CIRCUIT INCLUDING TRANSMISSION-LINE EFFECTS

被引：4

作者：

FJELDLY, TA ^{[1
]}

PAULSEN, A ^{[1
]}

JENSEN, O ^{[1
]}

机构：

[1] UNIV TRONDHEIM, NORWEGIAN INST TECHNOL, DEPT ELECT ENGN & COMP SCI, N-7034 TRONDHEIM, NORWAY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1557 / 1563

页数：7

共 13 条

[1]

CHEN TH, 1985, IEEE T ELECTRON DEV, V12, P883

[2] QUARTER MICRON LOW-NOISE GAAS-FETS [J].

CHYE, PW ;

HUANG, C .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :401-403

[3]

ENGELMANN RWH, 1976, DEC IEDM, P351

[4] NEGATIVE DIFFERENTIAL RESISTANCE IN GAAS-MESFETS [J].

FJELDLY, TA ;

JOHANNESSEN, JS .

ELECTRONICS LETTERS, 1983, 19 (17) :649-650

[5] ANALYTICAL MODELING OF THE STATIONARY DOMAIN IN GAAS-MESFETS [J].

FJELDLY, TA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :874-880

[6] CALCULATION OF HIGH-FREQUENCY CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS [J].

GEURST, JA .

SOLID-STATE ELECTRONICS, 1965, 8 (06) :563-+

[7] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

LIECHTI, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330

[8]

PAUL R, 1967, ARCH ELEKTR UBERTRAG, V21, P259

[9]

PAULSEN A, 1987, THESIS NORWEGIAN I T

[10]

SUNDSBO I, 1986, 12TH P NORD SEM M JE

← 1 2 →