ANALYTICAL MODELING OF THE STATIONARY DOMAIN IN GAAS-MESFETS

被引：9

作者：

FJELDLY, TA ^{[1
]}

机构：

[1] UNIV TRONDHEIM,NORWEGIAN INST TECHNOL,DEPT ELECT ENGN & COMP SCI,N-7034 TRONDHEIM,NORWAY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1109/T-ED.1986.22589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：874 / 880

页数：7

共 16 条

[1] THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN .

PHYSICS LETTERS, 1965, 19 (07) :546-&

[2] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W ;

HILSUM, C .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&

[3] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS [J].

ENGELMANN, RWH ;

LIECHTI, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) :1288-1296

[4]

ENGELMANN RWH, 1976, DEC IEDM, P351

[5] NEGATIVE DIFFERENTIAL RESISTANCE IN GAAS-MESFETS [J].

FJELDLY, TA ;

JOHANNESSEN, JS .

ELECTRONICS LETTERS, 1983, 19 (17) :649-650

[6]

FJELDLY TA, UNPUB

[7] ANALYTICAL THEORY OF STABLE DOMAINS IN HIGH-DOPED GUNN DIODES [J].

GELMONT, BL ;

SHUR, MS .

ELECTRONICS LETTERS, 1970, 6 (12) :385-+

[8] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J].

HILSUM, C .

ELECTRONICS LETTERS, 1974, 10 (13) :259-260

[9]

NAG B, 1980, ELECTRON TRANSPORT C

[10] ELECTRON-TRANSPORT PROPERTIES IN GAAS AT HIGH ELECTRIC-FIELDS [J].

POZELA, J ;

REKLAITIS, A .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :927-933

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