SILICON EPITAXY AT 230-DEGREES-C BY REACTIVE DC MAGNETRON SPUTTERING AND ITS INSITU ELLIPSOMETRY MONITORING

被引：18

作者：

FENG, GF ^{[1
]}

KATIYAR, M ^{[1
]}

MALEY, N ^{[1
]}

ABELSON, JR ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.105586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report epitaxial growth of silicon on Si (100) at 230-degrees-C by reactive dc magnetron sputter deposition. Growth is monitored with in situ multiwavelength ellipsometry to determine the film microstructure. Film crystallinity depends on the partial pressure of hydrogen during deposition, and the best film is obtained with 2 mTorr H-2. The films are found to have a bulk density deficit of a few percent and a low-density layer at the film-substrate interface. The microstructure is confirmed by transmission electron microscopy measurements. Infrared absorption and thermal hydrogen evolution measurements indicate that a large amount of molecular hydrogen is present at the substrate interface. We discuss the possible roles of hydrogen and particle bombardment in promoting epitaxial growth.

引用

页码：330 / 332

页数：3

共 17 条

[1] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J].