INTEGRATED PB-PEROVSKITE DIELECTRICS FOR SCIENCE AND TECHNOLOGY

被引:15
作者
DEY, SK
机构
[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287
[2] ARIZONA STATE UNIV,CTR ELECTR RES,TEMPE,AZ 85287
关键词
D O I
10.1080/00150199208230017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The critical requirements for thin film dielectric materials (ferroelectric and/or paraelectric) in niche technological areas (i.e., non-volatile memories, ULSI DRAMS and decoupling capacitors) are first considered. Next, the rationale for the need of epitaxial single crystal Pb-based ferroelectric perovskite thin films to address key scientific issues is outlined. These topics are followed by discussions on the recent progress (in our labortory) and future prospects on the chemical processing and properties of Pb-perovskite thin films. Finally, some thoughts on Professor Von Hippel's philosophy that will lead the field to advances into the threshold of the 21st century are echoed.
引用
收藏
页码:117 / 130
页数:14
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