INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：12

作者：

ROSNER, SJ ^{[1
]}

AMANO, J ^{[1
]}

LEE, JW ^{[1
]}

FAN, JCC ^{[1
]}

机构：

[1] KOPIN CORP,TAUNTON,MA 02780

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1101 / 1103

页数：3

共 17 条

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[9] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].

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[10]

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