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INALAS/INGAAS/INP JUNCTION HEMTS

被引：3
作者：
BOOS, JB
BINARI, SC
KRUPPA, W
HIER, H
机构：
[1] SFA INC,LANDOVER,MD 20785
[2] ALLIED SIGNAL AEROSP TECHNOL CTR,COLUMBIA,MD 21045
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 15期
关键词：
Semiconductor devices and materials;
D O I：
10.1049/el:19900758
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A junction high electron mobility transistor (JHEMT) has been demonstrated in the InAIAs/lnGaAs/lnP material system. Selective Zn diffusion is used to form a shallow p+ gate region within a planar-doped HEMT structure grown by MBE. These devices exhibit an extrinsic DC transconductance of 140mS/mm for a 1.6/μm gate length and good pinchoff characteristics. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1172 / 1173
页数：2
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