HIGH-PERFORMANCE INGAAS JUNCTION FIELD-EFFECT TRANSISTOR WITH P/BE CO-IMPLANTED GATE

被引：11

作者：

WANG, KW

CHENG, CL

LONG, J

MITCHAM, D

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

D O I：

10.1109/55.691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 207

页数：3

共 15 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2] INVESTIGATION OF IN0.53GA0.47AS FOR HIGH-FREQUENCY MICROWAVE-POWER FETS [J].

CHAI, YG ;

YUEN, C ;

ZDASIUK, GA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :972-977

[3]

CHAI YG, 1983, IEEE ELECTRON DEVICE, V4, P253

[4] JUNCTION FIELD-EFFECT TRANSISTORS USING IN0.53GA0.47AS MATERIAL GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, TY ;

LEHENY, RF ;

NAHORY, RE ;

SILBERG, E ;

BALLMAN, AA ;

CARIDI, EA ;

HARROLD, CJ .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :56-58

[5] SUBMICROMETER SELF-ALIGNED RECESSED GATE INGAAS MISFET EXHIBITING VERY HIGH TRANSCONDUCTANCE [J].

CHENG, CL ;

LIAO, ASH ;

CHANG, TY ;

LEHENY, RF ;

COLDREN, LA ;

LALEVIC, B .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :169-171

[6]

FAVENNEC PN, P INT S GAAS RELATED, V79, P343

[7] AN IN0.53GA0.47AS JUNCTION FIELD-EFFECT TRANSISTOR [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :110-111

[8] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[9] IN0.53GA0.47AS FETS WITH INSULATOR-ASSISTED SCHOTTKY GATES [J].

OCONNOR, P ;

PEARSALL, TP ;

CHENG, KY ;

CHO, AY ;

HWANG, JCM ;

ALAVI, K .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :64-66

[10] LIQUID-PHASE EPITAXIAL-GROWTH, ELECTRON-MOBILITY AND MAXIMUM DRIFT VELOCITY OF IN1-XGAXAS (X ALMOST EQUAL TO 0.5) FOR MICROWAVE DEVICES [J].

SASAKI, A ;

TAKEDA, Y ;

SHIKAGAWA, N ;

TAKAGI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :239-243

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