STRUCTURAL DEPENDENCE OF THE SEEBECK EFFECT OF THIN TELLURIUM-FILMS

The thermoelectric emf, Seebeck coefficient, and electrical conductivity of thin tellurium films were determined for temperature differences up to almost 80 °C with one end of the film held at about 24 °C under nonannealed, quenched, and annealed conditions. The first two factors were greatest for the nonannealed film and smallest for the annealed film, whereas the conductivity was greatest for the annealed film and smallest for the nonannealed film. The results suggest the charge carrier concentration as the dominant factor in the first two cases, in contrast to the mobility as the dominant factor in the last case.