EFFECTS OF UNIAXIAL STRESS ON FREE AND BOUND EXCITON IN GASB AT 1.7 DEGREES K

[1] AGARWAL RL, 1969, B AM PHYS SOC, V14, P736

[2] AGGARWAL RL, PRIVATE COMMUNICATIO

[3] EFFECTS OF UNIAXIAL STRAIN ON BAND-EDGE OPTICAL TRANSITIONS IN A DIRECT ZINC-BLENDE-STRUCTURE SEMICONDUCTOR [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 588 - &

[4] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[5] BENOITAL.C, 1970, J PHYS CHEM SOLIDS, V31, P411, DOI 10.1016/0022-3697(70)90121-6

[6] MODULATED PIEZOREFLECTANCE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 672 - +

[7] GILLEO MA, 1970, J LUMIN, V1, P562

[8] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1029 - &

[9] HOPFIELD JJ, 1964, 7TH P INT C PHYS SEM, P725

[10] Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153

[1] AGARWAL RL, 1969, B AM PHYS SOC, V14, P736

[2] AGGARWAL RL, PRIVATE COMMUNICATIO

[3] EFFECTS OF UNIAXIAL STRAIN ON BAND-EDGE OPTICAL TRANSITIONS IN A DIRECT ZINC-BLENDE-STRUCTURE SEMICONDUCTOR [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 588 - &

[4] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[5] BENOITAL.C, 1970, J PHYS CHEM SOLIDS, V31, P411, DOI 10.1016/0022-3697(70)90121-6

[6] MODULATED PIEZOREFLECTANCE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 672 - +

[7] GILLEO MA, 1970, J LUMIN, V1, P562

[8] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1029 - &

[9] HOPFIELD JJ, 1964, 7TH P INT C PHYS SEM, P725

[10] Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153