INFLUENCE OF ANNEALING ON THE OPTICAL-PROPERTIES OF INDIUM TIN OXIDE

被引：69

作者：

WEIJTENS, CHL

VANLOON, PAC

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

THIN SOLID FILMS | 1991年 / 196卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90169-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of annealing on the optical properties of indium tin oxide films prepared by d.c. magnetron sputtering was investigated. The influence of annealing can be described in terms of a change in free electron concentration. With an increase in carrier concentration the absorption edge due to the direct and the indirect transition shifts to the near UV. The intrinsic band gap is found to be 3.53 eV, the intrinsic indirect transition energy is 1.80 eV. The effective electron mass is 0.31m(o) and 1.0m(o) for electrons in the conduction and the valence band respectively.

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页码：1 / 10

页数：10

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