SELECTIVE GROWTH OF HETEROEPITAXIAL GAP ON SI SUBSTRATES

被引：13

作者：

IGARASHI, O

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 10期

关键词：

D O I：

10.1149/1.2404013

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1430 / &

相关论文

共 5 条

[1] HETEROEPITAXIAL GROWTH OF GAP ON SI SUBSTRATES BY EVAPORATION METHOD
IGARASHI, O
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3190 - &
[2] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS
NICOLL, FH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) : 1165 - 1167
[3] Epitaxial Layers of Gallium Phosphide on Silicon
Noack, J.
Moehling, W.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04): : K229 - K231
[4] ROBINSON PH, 1963, RCA REV, V24, P574
[5] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS
THURMOND, CD
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 785 - &