Epitaxial Layers of Gallium Phosphide on Silicon

被引：7

作者：

Noack, J. ^{[1
]}

Moehling, W. ^{[1
]}

机构：

[1] Deutsch Akad Wissensch Berlin, Abt Kristallwachstum & Realstruktur, Zentralinst Elektronenphys, Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1970年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssa.19700030426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K229 / K231

页数：3

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[2] HETEROEPITAXIAL GROWTH OF GAP ON SI SUBSTRATES BY EVAPORATION METHOD
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[3] VAPOR TRANSPORT THERMODYNAMICS OF GAP-CL2-H2 SYSTEM IN AN OPEN TUBE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (12) : 1414 - &
[4] GROWTH OF SINGLE CRYSTAL GAP FROM ORGANOMETALLIC SOURCES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) : 1449 - &
[5] SI-GAP HETEROJUNCTIONS
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ANDERSON, RL
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