TAILING IN DENSITY OF STATES IN AMORPHOUS SILICON

[1] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +

[2] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J]. SURFACE SCIENCE, 1971, 26 (02) : 587 - &

[3] ERBUDAK M, 1971, 4 P INT C AM LIQ SEM

[4] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &

[5] MOTT NF, 1967, ADVAN PHYS, V16, P1

[6] PHOTOEMISSION FROM AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (13) : 861 - &

[7] LACK OF PHOTOEMISSION EVIDENCE FOR TAILING OF DENSITY OF STATES INTO ENERGY GAP OF AMORPHOUS SI [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (18) : 1217 - &

[1] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +

[2] ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES [J]. SURFACE SCIENCE, 1971, 26 (02) : 587 - &

[3] ERBUDAK M, 1971, 4 P INT C AM LIQ SEM

[4] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J]. PHYSICAL REVIEW, 1965, 137 (1A): : A245 - &

[5] MOTT NF, 1967, ADVAN PHYS, V16, P1

[6] PHOTOEMISSION FROM AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (13) : 861 - &

[7] LACK OF PHOTOEMISSION EVIDENCE FOR TAILING OF DENSITY OF STATES INTO ENERGY GAP OF AMORPHOUS SI [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (18) : 1217 - &