PHOTOEMISSION FROM AMORPHOUS SILICON

被引：23

作者：

PETERSON, CW

DINAN, JH

FISCHER, TE

机构：

来源：

PHYSICAL REVIEW LETTERS | 1970年 / 25卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.25.861

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：861 / &

共 22 条

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[3]

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[4] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

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TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[5] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[6] ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM [J].

CLARK, AH .

PHYSICAL REVIEW, 1967, 154 (03) :750-&

[7] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[8] EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE [J].

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BENNETT, JM .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1058-&

[9]

DONOVAN TM, TO BE PUBLISHED

[10]

FISCHER TE, 1969, SURFACE SCI, V13, P31

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