ION-BEAM DEPOSITION OF FERROELECTRIC THIN-FILMS SPUTTERED FROM MULTICOMPONENT TARGETS

Ion beam sputtering is evaluated as a technique for the deposition of thin films of mixed oxide ferroelectrics. With this technique, the plasma is contained in the ion gun so that the target and substrate are maintained in a plasma-free environment at ground potential. Several parameters that affect thin film properties such as substrate and target angle and position, substrate temperature, etc. , could therefore be varied. Dielectric constant, film thickness, and elemental ratios are shown to vary with the position and angle of the substrate. Films deposited at substrate temperatures below 325 degree C had the pyrochlore structure. Above 325 degree C, the ferroelectric perovskite structure was obtained.