ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF GEXSI1-X/SI STRUCTURES

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[2] ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 435 - 442

[3] ELLIMAN RG, 1986, NUCL INSTRUM METH B, V15, P439, DOI 10.1016/0168-583X(86)90340-X

[4] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[5] ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE [J]. PHYSICAL REVIEW B, 1984, 30 (07): : 3629 - 3638

[6] INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI [J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2605 - 2607

[7] YU AA, UNPUB

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61

[2] ION-BEAM-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 435 - 442

[3] ELLIMAN RG, 1986, NUCL INSTRUM METH B, V15, P439, DOI 10.1016/0168-583X(86)90340-X

[4] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[5] ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE [J]. PHYSICAL REVIEW B, 1984, 30 (07): : 3629 - 3638

[6] INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI [J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2605 - 2607

[7] YU AA, UNPUB