INFLUENCE OF A THIN INTERFACIAL OXIDE LAYER ON THE ION-BEAM ASSISTED EPITAXIAL CRYSTALLIZATION OF DEPOSITED SI

被引：15

作者：

PRIOLO, F

LAFERLA, A

SPINELLA, C

RIMINI, E

FERLA, G

BAROETTO, F

LICCIARDELLO, A

机构：

[1] SGS THOMSON, CATANIA, ITALY

[2] DIPARTIMENTO SCI CHIM, CATANIA, ITALY

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2605 / 2607

页数：3

共 14 条

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FERLA, G .

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[6] ORIENTATION AND DOPING EFFECTS IN ION-BEAM ANNEALING OF ALPHA-SILICON [J].

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FERLA, G ;

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[7] PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION [J].

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[8] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J].

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[9] ION-BEAM-INDUCED MIGRATION AND ITS EFFECT ON CONCENTRATION PROFILES [J].

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[10]

OLSON GL, 1985, MATER RES SOC S P, V35, P25

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