ELECTRICAL AND OPTICAL-PROPERTIES OF VACUUM-EVAPORATED INDIUM - TIN OXIDE-FILMS WITH HIGH ELECTRON-MOBILITY

被引：66

作者：

NAGATOMO, T

MARUTA, Y

OMOTO, O

机构：

[1] Shibaura Institute of Technology, Minato-ku, Tokyo, 108

来源：

THIN SOLID FILMS | 1990年 / 192卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90475-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin-doped In2O3 films with high electron mobility (180 cm2V-1 s-1) were obtained by reactive evaporation of indium and tin in oxygen, compared with In2O3 and tin-doped In2O3 films prepared by various fabrication techniques. The high electron mobility of tin-doped In2O3 films is due to the improvement in the crystallinity and the preferential orientation of the (222) crystal plane. The electrical and optical properties of tin-doped In2O3 and undoped In2O3 films are described. © 1990.

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页码：17 / 25

页数：9

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