LPCVD OF INSITU DOPED POLYCRYSTALLINE SILICON AT HIGH GROWTH-RATES

被引：24

作者：

AHMED, W

MEAKIN, DB

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90466-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：394 / 398

页数：5

共 18 条

[1]

AHMED W, 1986, UNPUB

[2]

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[3] THE LPCVD POLYSILICON PHOSPHORUS DOPED INSITU AS AN INDUSTRIAL-PROCESS [J].

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SACILOTTI, M .

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[4]

FARROW RC, 1974, J ELECTROCHEM SOC, V121, P399

[5]

HARBEKE G, 1983, RCA REV, V44, P19

[6]

HARBEKE G, 1983, RCA REV, V44, P287

[7] SOME RECENT TRENDS IN THE PREPARATION OF THIN-LAYERS BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

HITCHMAN, ML ;

AHMED, W .

VACUUM, 1984, 34 (10-1) :979-986

[8] POLYSILICON GROWTH-KINETICS IN A LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION REACTOR [J].

HITCHMAN, ML ;

KANE, J ;

WIDMER, AE .

THIN SOLID FILMS, 1979, 59 (02) :231-247

[9] SEMI-INSULATING POLYSILICON (SIPOS) DEPOSITION IN A LOW-PRESSURE CVD REACTOR .1. GROWTH-KINETICS [J].

HITCHMAN, ML ;

KANE, J .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :485-500

[10]

HITCHMAN ML, 1979, 7TH P INT C CVD, P59

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