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ANALYSIS OF MOSFET CAPACITANCES AND THEIR BEHAVIOR AT SHORT-CHANNEL LENGTHS USING AN AC DEVICE SIMULATOR

被引：9
作者：
OHKURA, Y
TOYABE, T
MASUDA, H
机构：
[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1987年 / 6卷 / 03期
关键词：
D O I：
10.1109/TCAD.1987.1270288
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Intrinsic MOSFET capacitances are calculated using the three-dimensional ac device simulator CADDETH, and distributions of the internal ac currents are studied. The simulations clearly show the influence of velocity saturation. Short-channel effects on the intrinsic MOSFET capacitances are analyzed.
引用
收藏
页码：423 / 430
页数：8
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