THE PREFERRED ORIENTATION OF SILICON FILMS GROWN BY LPCVD AT RELATIVELY LOW-TEMPERATURES

被引：4

作者：

KARAKOSTAS, T ^{[1
]}

MEAKIN, D ^{[1
]}

MIGLIORATO, P ^{[1
]}

STOEMENOS, J ^{[1
]}

ECONOMOU, NA ^{[1
]}

机构：

[1] GEC RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1988年 / 7卷 / 03期

关键词：

D O I：

10.1007/BF01730186

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：247 / 250

页数：4

共 8 条

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[5] GRAIN-BOUNDARY ANALYSIS IN TEM .3. DETERMINATION OF CONDITIONS FOR CSL AND APPLICATION IN COPPER [J].

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[6] STRUCTURAL STUDIES OF LOW-TEMPERATURE LOW-PRESSURE CHEMICAL DEPOSITED POLYCRYSTALLINE SILICON [J].

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[7]

MEAKIN D, IN PRESS J VAC SCI T

[8] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].

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