SURFACE ETCHING BY LASER-GENERATED FREE-RADICALS

被引：45

作者：

STEINFELD, JI ^{[1
]}

ANDERSON, TG ^{[1
]}

REISER, C ^{[1
]}

DENISON, DR ^{[1
]}

HARTSOUGH, LD ^{[1
]}

HOLLAHAN, JR ^{[1
]}

机构：

[1] PERKIN ELMER CORP,ULTEK DIV,MT VIEW,CA 94043

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 02期

关键词：

D O I：

10.1149/1.2129698

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：514 / 515

页数：2

共 9 条

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[6]

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[7] LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

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[8] PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH [J].

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[9] INFRARED MULTI-PHOTON DISSOCIATION OF CF3BR [J].

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