ROOM-TEMPERATURE RECOMBINATION OF POINT-DEFECTS PRODUCED IN SILICON P-N-JUNCTIONS BY LIGHT-ION IRRADIATION

The reverse current in a p+-n silicon junction irradiated by high-energy helium ions was measured as a function of time at room temperature. A rather large exponential decrease of the reverse current has been observed and the measured time constant is 3 +/- 0.2 days. Defect profiling by current-voltage characteristics indicates that the damage recombination occurs without long-range migration of defects. The defects responsible for the reverse current of irradiated silicon diodes after the long room-temperature aging are characterized by an energy level 0.11 eV above Si midgap.