GENERATION OF DIVACANCIES IN SILICON IRRADIATED BY 2-MEV ELECTRONS - DEPTH AND DOSE DEPENDENCE

被引：104

作者：

SVENSSON, BG

WILLANDER, M

机构：

[1] NATL DEF RES INST,S-58111 LINKOPING,SWEDEN

[2] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2758 / 2762

页数：5

共 21 条

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