Time-resolved photoluminescence of pseudomorphic SiGe quantum wells

被引：21

作者：

Zrenner, A

Frohlich, B

Brunner, J

Abstreiter, G

机构：

[1] Walter Schottky Institut, Technische Universität Munchen

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.52.16608

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report low-temperature time-resolved photoluminescence experiments on a pseudomorphic SiGe quantum-well structure. Under the condition of optical absorption in the Si buffer layers, the decay time of the SiCe quantum-well luminescence is controlled by the capture of excitons and electron-hole droplets. From the onset of the SiGe luminescence, the exciton lifetime in the investigated 59-Angstrom-wide Si0.72Ge0.28 quantum wells is found to be about 100 ns.

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页码：16608 / 16611

页数：4

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