EPITAXIAL GROWTH OF GAAS1-XPX

[1] AOKI S, 1969, 1 P C SOL STAT DEV T, P234

[2] BURD JW, 1969, T METALL SOC AIME, V245, P571

[3] BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587

[4] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817

[5] JOICE BD, 1966, P S GAAS, P4

[6] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[8] 1971, HITACHI HYORON, V53, P3

[1] AOKI S, 1969, 1 P C SOL STAT DEV T, P234

[2] BURD JW, 1969, T METALL SOC AIME, V245, P571

[3] BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587

[4] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817

[5] JOICE BD, 1966, P S GAAS, P4

[6] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 248 - +

[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[8] 1971, HITACHI HYORON, V53, P3