BASE TRANSIT-TIME FOR SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：8

作者：

GAO, GB ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 16期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The base transit time expressions for SiGe base hetero-junction bipolar transistors are presented including the accelerating field effects due to the base bandgap grading and doping grading, and the retarding field (opposing drift field) effect from the graded boron profile down towards the emitter. It is found that the retarding field exhibits 40-80% contribution to the base transit time, depending on the boron concentration near the emitter. The results of base transit time from these analytic expressions are unambiguously supported by the published simulation data.

引用

页码：1408 / 1410

页数：3

共 7 条

[1]

Crabbe E. F., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P463, DOI 10.1109/IEDM.1990.237067

[2] BANDGAP AND TRANSPORT-PROPERTIES OF SI1-XGEX BY ANALYSIS OF NEARLY IDEAL SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS [J].