IMPURITY DEPENDENCE OF FILM-EDGE-INDUCED DISLOCATIONS IN SILICON

被引：7

作者：

HUANG, CK ^{[1
]}

JACCODINE, RJ ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD CTR SOLID STATE STUDY,BETHLEHEM,PA 18015

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：531 / 535

页数：5

共 33 条

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[10]

HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575

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