FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS

被引：53

作者：

AHN, ST ^{[1
]}

KENNEL, HW ^{[1
]}

PLUMMER, JD ^{[1
]}

TILLER, WA ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4914 / 4919

页数：6

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