THRESHOLD SWITCHING TRANSIENT IN METAL A-SI-H C-SI(P-N) (MASS) HETEROJUNCTION DEVICE

被引：6

作者：

CHEN, YW ^{[1
]}

FANG, YK ^{[1
]}

LEE, HD ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 04期

关键词：

D O I：

10.1016/0038-1101(90)90051-F

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel structure of metal/a-Si:H/c-Si(p-n) (MASS) heterojunction threshold switching device was successfully developed. Three types of structures of devices are discussed. A typical structure is Cr/a-Si:H(i = 300 A ̊)/c-Si(p = 16 μm)/c-Si(n-n+) of the device, for which the switching voltage and holding voltage are 31 and 5 V, respectively. The corresponding switching current and holding current are 0.5 and 2.6 mA, respectively. All these characteristics are increased with the thickness of the a-Si:H i layer. The device can also be used as a light-controlled switching device, and sensitive in the visible light wavelength range. The minimum triggering optical power is 25 μW and the speed of response to light is 12-15 μs. © 1990.

引用

页码：461 / 465

页数：5

共 16 条

[1] METAL-SEMICONDUCTOR CONTACTS ON HYDROGENATED AMORPHOUS-SILICON FILMS [J].