THEORY OF SWITCHING IN POLYSILICON N-P+ STRUCTURES

被引：11

作者：

DARWISH, M

BOARD, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 8-9期

关键词：

D O I：

10.1016/0038-1101(84)90026-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：775 / 783

页数：9

共 15 条

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[3] A NEW FORM OF 2-STATE SWITCHING DEVICE, USING A BULK SEMICONDUCTOR BARRIER [J].

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SOLID-STATE ELECTRONICS, 1982, 25 (07) :571-575

[4] THEORY OF SWITCHING IN POLYSILICON-N-P+ SILICON STRUCTURES [J].

BOARD, K ;

DARWISH, M .

ELECTRONICS LETTERS, 1981, 17 (01) :41-42

[5] EXPERIMENTAL-OBSERVATION OF SWITCHING IN MISM AND MISIM DEVICES [J].

DARWISH, M ;

BOARD, K .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (05) :161-164

[6] THEORY OF SWITCHING IN MISIM STRUCTURES [J].

DARWISH, M ;

BOARD, K .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (05) :165-173

[7] SWITCHING IN MISM STRUCTURES [J].

DARWISH, M ;

BOARD, K .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (06) :317-322

[8]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE [J].

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SIMMONS, JG .

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[10]

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