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THEORY OF SWITCHING IN POLYSILICON-N-P+ SILICON STRUCTURES
被引:4
作者
:
BOARD, K
论文数:
0
引用数:
0
h-index:
0
BOARD, K
DARWISH, M
论文数:
0
引用数:
0
h-index:
0
DARWISH, M
机构
:
来源
:
ELECTRONICS LETTERS
|
1981年
/ 17卷
/ 01期
关键词
:
D O I
:
10.1049/el:19810030
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:41 / 42
页数:2
相关论文
共 7 条
[1]
BOARD K, 1980, 10TH EUR SOL STAT DE
[2]
THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE
[J].
HABIB, SED
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Toronto, Toronto, Ont.
HABIB, SED
;
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Toronto, Toronto, Ont.
SIMMONS, JG
.
SOLID-STATE ELECTRONICS,
1979,
22
(02)
:181
-192
[3]
THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .2. AVALANCHE MODE
[J].
HABIB, SED
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
HABIB, SED
;
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
SIMMONS, JG
.
SOLID-STATE ELECTRONICS,
1980,
23
(05)
:497
-505
[4]
BISTABLE IMPEDANCE STATES IN MIS STRUCTURES THROUGH CONTROLLED INVERSION
[J].
KROGER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SPERRY RES CTR,SUDBURY,MA 01776
SPERRY RES CTR,SUDBURY,MA 01776
KROGER, H
;
WEGENER, HAR
论文数:
0
引用数:
0
h-index:
0
机构:
SPERRY RES CTR,SUDBURY,MA 01776
SPERRY RES CTR,SUDBURY,MA 01776
WEGENER, HAR
.
APPLIED PHYSICS LETTERS,
1973,
23
(07)
:397
-399
[5]
PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
[J].
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
;
AUCOIN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
;
ROSS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
BOARD, K
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
.
ELECTRONICS LETTERS,
1980,
16
(22)
:836
-837
[6]
A NEW MAJORITY CARRIER DIODE - THE CAMEL DIODE
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
SHANNON, JM
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
:301
-304
[7]
THIN-MIS-STRUCTURE SI NEGATIVE-RESISTANCE DIODE
[J].
YAMAMOTO, T
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, T
;
MORIMOTO, M
论文数:
0
引用数:
0
h-index:
0
MORIMOTO, M
.
APPLIED PHYSICS LETTERS,
1972,
20
(08)
:269
-&
←
1
→
共 7 条
[1]
BOARD K, 1980, 10TH EUR SOL STAT DE
[2]
THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE
[J].
HABIB, SED
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Toronto, Toronto, Ont.
HABIB, SED
;
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, University of Toronto, Toronto, Ont.
SIMMONS, JG
.
SOLID-STATE ELECTRONICS,
1979,
22
(02)
:181
-192
[3]
THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .2. AVALANCHE MODE
[J].
HABIB, SED
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
HABIB, SED
;
SIMMONS, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A1,ONTARIO,CANADA
SIMMONS, JG
.
SOLID-STATE ELECTRONICS,
1980,
23
(05)
:497
-505
[4]
BISTABLE IMPEDANCE STATES IN MIS STRUCTURES THROUGH CONTROLLED INVERSION
[J].
KROGER, H
论文数:
0
引用数:
0
h-index:
0
机构:
SPERRY RES CTR,SUDBURY,MA 01776
SPERRY RES CTR,SUDBURY,MA 01776
KROGER, H
;
WEGENER, HAR
论文数:
0
引用数:
0
h-index:
0
机构:
SPERRY RES CTR,SUDBURY,MA 01776
SPERRY RES CTR,SUDBURY,MA 01776
WEGENER, HAR
.
APPLIED PHYSICS LETTERS,
1973,
23
(07)
:397
-399
[5]
PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
[J].
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
;
AUCOIN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
;
ROSS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
BOARD, K
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
.
ELECTRONICS LETTERS,
1980,
16
(22)
:836
-837
[6]
A NEW MAJORITY CARRIER DIODE - THE CAMEL DIODE
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
SHANNON, JM
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
:301
-304
[7]
THIN-MIS-STRUCTURE SI NEGATIVE-RESISTANCE DIODE
[J].
YAMAMOTO, T
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, T
;
MORIMOTO, M
论文数:
0
引用数:
0
h-index:
0
MORIMOTO, M
.
APPLIED PHYSICS LETTERS,
1972,
20
(08)
:269
-&
←
1
→