VICINAL SI(111) SURFACES STUDIED BY OPTICAL 2ND-HARMONIC GENERATION - STEP-INDUCED ANISOTROPY AND SURFACE-BULK DISCRIMINATION

被引：75

作者：

VANHASSELT, CW

VERHEIJEN, MA

RASING, T

机构：

[1] Research Institute for Materials, University of Nijmegen, NL 6525-ED Nijmegen, Toernooiveld

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.42.9263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By modifying a Si(111) surface through the introduction of a variable number of steps, the anisotropic surface and bulk contributions to the optical second-harmonic generation could be determined separately and were found to be of the same order of magnitude for a Si-SiO2 interface. This approach is based on the lowering of the surface symmetry by the steps and by the apparent enhancement of the nonlinear susceptibility at the step edges. © 1990 The American Physical Society.

引用

页码：9263 / 9266

页数：4

共 18 条

[1]

Aktsipetrov O. A., 1984, Soviet Physics - Doklady, V29, P37

[2] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].