A THEORETICAL-STUDY OF RESONANT CAVITY-ENHANCED PHOTODETECTORS WITH GE AND SI ACTIVE REGIONS

被引:65
作者
UNLU, MS
KISHINO, K
LIAW, HJ
MORKOC, H
机构
[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA
[2] SOPHIA UNIV, TOKYO 102, JAPAN
关键词
D O I
10.1063/1.350829
中图分类号
O59 [应用物理学];
学科分类号
摘要
An integration of Ge or Si with compound semiconductors is considered for optical detectors at wavelengths ranging from the visible to 1.55-mu-m. Both Ge and Si are indirect band gap materials with relatively small absorption coefficients but very long carrier lifetimes. Using a resonant cavity formed by large band gap compound semiconductor mirrors surrounding Ge and Si active layers, high photosensitivity for thin (< 0.5-mu-m) absorbing layers can be achieved. Two different methods are discussed and compared for the calculation of the photosensitivity of resonant cavity enhanced detectors. The standing wave effect and its dependence on cavity parameters are analyzed. Design rules for such resonant cavity enhanced photodetectors are presented. The spectral response of some device designs to achieve high quantum efficiency and wavelength selectivity has also been theoretically investigated.
引用
收藏
页码:4049 / 4058
页数:10
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