COMPUTER-ANALYSIS OF A SHORT-CHANNEL BC MOSFET

被引:18
作者
OKA, H
NISHIUCHI, K
NAKAMURA, T
ISHIKAWA, H
机构
关键词
D O I
10.1109/T-ED.1980.20065
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1514 / 1520
页数:7
相关论文
共 18 条
[1]  
CHATTERJEE PK, 1979, ISSCC 79, P22
[2]  
ELMANSY YA, 1978, IEDM, P20
[3]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[4]  
HAKEN RA, 1978, SOLID STATE ELECTRON, V21, P735
[5]   2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
MOCK, MS .
SOLID-STATE ELECTRONICS, 1973, 16 (05) :601-609
[6]   FEMTO JOULE LOGIC-CIRCUIT WITH ENHANCEMENT-TYPE SCHOTTKY-BARRIER GATE FET [J].
MUTA, H ;
SUZUKI, S ;
YAMADA, K ;
NAGAHASHI, Y ;
TANAKA, T ;
OKABAYASHI, H ;
KAWAMURA, N .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1023-1027
[7]  
NISHIUCHI K, 1978, IEDM TECH DIG, P26
[8]   FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J].
NISHIZAWA, JI ;
TERASAKI, T ;
SHIBATA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :185-197
[9]   2-DIMENSIONAL ANALYSIS OF SUBSTRATE EFFECTS IN JUNCTION FETS [J].
REISER, M .
ELECTRONICS LETTERS, 1970, 6 (16) :493-&
[10]   CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS [J].
SCHEMMERT, W ;
GABLER, L ;
HOEFFLINGER, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1313-1319