STRUCTURE AND CONDUCTANCE EVOLUTION OF VERY THIN INDIUM OXIDE-FILMS

被引：59

作者：

KOROBOV, V

LEIBOVITCH, M

SHAPIRA, Y

机构：

[1] Department of Electrical Engineering-Physical Electronics, Faculty of Engineering, Tel-Aviv University

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conductance of transparent conducting oxide films as a function of their coverage has been investigated in situ. The films have been prepared by means of reactive evaporation of In in the presence of oxygen on the glass substrate at different substrate temperatures. The analysis shows that island growth, percolation, coalescence, and ohmic stages can be identified. Critical parameters of the films can be determined during the growth, such as anisotropic and percolative growth modes, resistivity, a lower limit df the effective dopant concentration. The technique shows a potential for-in-depth characterization of very thin film growth. (c) 1994 American Institute of Physics.

引用

页码：2290 / 2292

页数：3

共 14 条

[1] MICROSCOPIC ASPECTS OF CONDUCTION IN DISCONTINUOUS METAL SYSTEMS [J].

ADKINS, CJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (35) :7143-7155

[2]

Bottger H., 1985, HOPPING CONDUCTION S

[3] METAL-INSULATOR-TRANSITION IN THIN NICKEL FILMS [J].

CHERIET, L ;

HELBIG, HH ;

ARAJS, S .

PHYSICAL REVIEW B, 1989, 39 (14) :9828-9830

[4] NOVEL INDIUM OXIDE N-GAAS DIODES [J].

GOLAN, A ;

BREGMAN, J ;

SHAPIRA, Y ;

EIZENBERG, M .

APPLIED PHYSICS LETTERS, 1990, 57 (21) :2205-2207

[5] EFFECT OF SUBSTRATE-TEMPERATURE ON ULTRAHIGH-VACUUM INTERFACES OF INDIUM OXIDE GAAS(110) [J].

GOLAN, A ;

SHAPIRA, Y ;

EIZENBERG, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :567-571

[6]

HOAREAU A, 1992, THIN SOLID FILMS, V208, P161

[7] DIRECT OBSERVATION OF THE INFINITE PERCOLATION CLUSTER IN THIN-FILMS - EVIDENCE FOR A DOUBLE PERCOLATION PROCESS [J].

JENSEN, P ;

MELINON, P ;

TREILLEUX, M ;

HU, JX ;

DUMAS, J ;

HOAREAU, A ;

CABAUD, B .

PHYSICAL REVIEW B, 1993, 47 (09) :5008-5012

[8] INDIUM OXIDE SCHOTTKY JUNCTIONS WITH INP AND GAAS [J].

KOROBOV, V ;

LEIBOVITCH, M ;

SHAPIRA, Y .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3251-3256

[9] EFFECT OF DEPOSITION PARAMETERS ON THE PROPERTIES OF IN2O3/INP JUNCTIONS [J].

KOROBOV, V ;

SHAPIRA, Y ;

BER, B ;

FALEEV, K ;

ZUSHINSKIY, D .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) :2264-2269

[10] CRITICAL-BEHAVIOR OF THE ELECTRICAL-RESISTANCE OF VERY THIN CR FILMS [J].

LOURENS, JAJ ;

ARAJS, S ;

HELBIG, HF ;

MEHANNA, ESA ;

CHERIET, L .

PHYSICAL REVIEW B, 1988, 37 (10) :5423-5425

← 1 2 →