EFFECT OF SWIRL DEFECTS ON MINORITY-CARRIER LIFETIME IN HEAT-TREATED SILICON-CRYSTALS

被引：15

作者：

USAMI, A

FUJII, Y

MORIOKA, K

机构：

[1] NAGOYA INST TECHNOL, DEPT ELECTR, SHOWA KU, NAGOYA, JAPAN

[2] TOYO SILICON CO INC, DEPT TECH, NODA, CHIBA, JAPAN

来源：

关键词：

D O I：

10.1088/0022-3727/10/6/013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：899 / 910

页数：12

共 22 条

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