COMPOSITION OF TUNGSTEN SILICIDE FILMS DEPOSITED BY DICHLOROSILANE REDUCTION OF TUNGSTEN HEXAFLUORIDE

被引：20

作者：

HARA, T ^{[1
]}

MIYAMOTO, T ^{[1
]}

HAGIWARA, H ^{[1
]}

BROMLEY, EI ^{[1
]}

HARSHBARGER, WR ^{[1
]}

机构：

[1] GENUS CORP,MT VIEW,CA 94943

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期

关键词：

D O I：

10.1149/1.2087105

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The composition profile of tungsten silicide (WSix) films deposited by low-pressure chemical vapor deposition employing dichlorosilane (DCS) reduction of tungsten hexafluoride (WF6) is studied. Diffusion is the reaction rate-limiting process at chuck temperatures above 550°C and uniform in-depth composition profiles can be obtained. Below 550°C, however, the in-depth composition profile is not uniform for the surface reaction rate-limiting process. Tungsten-rich layers with a Si composition, x, of 1.5, are initially deposited due to the reduction of WF6 by the Si surface. This layer is amorphous or microcrystalline. Thereafter, the silicon content of the film increases with increasing thickness and a uniform composition profile is obtained as determined by the DCS/WVF6 flow rate ratio in the chemical reaction. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：2955 / 2959

页数：5

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