PROPERTIES OF WSIX USING DICHLOROSILANE IN A SINGLE-WAFER SYSTEM

被引:18
作者
WU, THT
ROSLER, RS
LAMARTINE, BC
GREGORY, RB
TOMPKINS, HG
机构
[1] MOTOROLA INC,PHOENIX,AZ 85008
[2] MOTOROLA INC,MESA,AZ 85202
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词
D O I
10.1116/1.584165
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1707 / 1713
页数:7
相关论文
共 15 条
[1]  
BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183
[2]   FLUORINE DISTRIBUTIONS IN A CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE POLYCRYSTALLINE SILICON COMPOSITE GATE STRUCTURE [J].
FUKUMOTO, M ;
OHZONE, T .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :894-896
[3]  
GREGORY RB, 1988, 10TH S APPL SURF AN
[4]   COMPOSITION OF CVD TUNGSTEN SILICIDES [J].
HARA, T ;
TAKAHASHI, H ;
ISHIZAWA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1302-1306
[5]   A MEASUREMENT OF INTRINSIC SIO2 FILM STRESS RESULTING FROM LOW-TEMPERATURE THERMAL-OXIDATION OF SI [J].
KOBEDA, E ;
IRENE, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :720-722
[6]   REDISTRIBUTION OF EXCESS SI IN CHEMICAL VAPOR-DEPOSITED WSIX FILMS UPON POSTDEPOSITION ANNEALING [J].
KOTTKE, M ;
PINTCHOVSKI, F ;
WHITE, TR ;
TOBIN, PJ .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2835-2841
[7]  
LAMARTINE BC, 1986, MICRO BEAM ANAL 1986, P88
[8]  
Price J, 1987, U. S. Patent, Patent No. [4,692,343, 4692343]
[9]  
PRICE JB, 1986, SEMICON W
[10]   PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J].
SARASWAT, KC ;
BRORS, DL ;
FAIR, JA ;
MONNIG, KA ;
BEYERS, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1497-1505