GROWTH AND DIFFUSION OF ABRUPT BERYLLIUM-DOPED PROFILES IN GALLIUM-ARSENIDE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：21

作者：

TEJWANI, MJ

KANBER, H

PAINE, BM

WHELAN, JM

机构：

[1] HUGHES AIRCRAFT CO,DIV MICROWAVE PROD,TORRANCE,CA 90509

[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2411 / 2413

页数：3

共 12 条

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[3] GROWTH AND DIFFUSION OF ABRUPT ZINC PROFILES IN GALLIUM-ARSENIDE AND HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

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[9] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J].

MILLER, DL ;

ASBECK, PM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1816-1822

[10] CONTROL OF BE DIFFUSION IN MOLECULAR-BEAM EPITAXY GAAS [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (10) :960-962

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