RECTIFICATION AT N-GAAS-N-GA0.7AL0.3AS HETEROJUNCTIONS GROWN BY LIQUID-PHASE EPITAXY

被引：8

作者：

CHANDRA, A

EASTMAN, LF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1525 / 1528

页数：4

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共 15 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] RECTIFICATION AT N-N GAAS - (GA, AL)AS HETEROJUNCTIONS
CHANDRA, A
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1979, 15 (03) : 90 - 91
[3] CHANDRA A, 1979, THESIS CORNELL U
[4] CHANDRA A, UNPUBLISHED
[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[7] AUGER PROFILING STUDIES OF LPE N-ALXGA1-XAS-N-GAAS HETEROJUNCTIONS AND ABSENCE OF RECTIFICATION
GARNER, CM
SHEN, YD
SU, CY
PEARSON, GL
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1480 - 1482
[8] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
MURLEY, PC
KLEINFELDER, W
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +
[9] PHOTOCOLLECTION EFFICIENCY AND INTERFACE CHARGES OF MBE-GROWN ABRUPT P(GAAS)-N(AL0.33GA0.67AS) HETEROJUNCTIONS
KROEMER, H
CHIEN, WY
CASEY, HC
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 749 - 751
[10] Kroemer Herbert, COMMUNICATION