INTEGRATABLE, HIGH-SPEED BURIED RIDGE DFB LASERS FABRICATED ON SEMI-INSULATING SUBSTRATES

The fabrication of buried ridge DFB lasers on semi-insulating substrates is described. A novel contacting mechanism was employed to give a series resistance of less than 4-OMEGA. Devices were fabricated at both 1.3 and 1.53-mu-m with lasing thresholds as low as 16 mA. Single longitudinal mode operation was achieved with SMSR greater than 30 dB at both wavelengths. The structure gives an inherently low capacitance, which together with low threshold currents, low series resistance and fabrication on SI substrates makes these devices suitable for integration and high speed applications.