1.53-MU-M DFB LASER ON SEMI-INSULATING INP SUBSTRATE WITH VERY LOW THRESHOLD CURRENT

被引：5

作者：

THULKE, W

ILLEK, S

机构：

[1] Siemens AG Research Laboratories, D-8000 Munich 83

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Lasers and laser applications; Semiconductor lasers;

D O I：

10.1049/el:19900609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel GalnAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as 7 mA have been measured at 25°C on 200 μm long devices. These are the lowest values reported for 1-5 (im DFB lasers on semi-insulating substrate. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：933 / 934

页数：2

共 5 条

[1] MODIFIED 1.3 MU-M BURIED RIDGE STRIPE LASER FOR IMPLANTED-FET INTEGRATION [J].