GALLIUM-PHOSPHIDE HIGH-TEMPERATURE ELECTROLUMINESCENT P-N-P-N SWITCHES AND CONTROLLED RECTIFIERS

被引：13

作者：

KEUNE, DL

HERZOG, AH

FITZPATRICK, BJ

CRAFORD, MG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 08期

关键词：

D O I：

10.1063/1.1661730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3417 / +

页数：1

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[8] A TECHNIQUE FOR DETERMINING P-N JUNCTION DOPING PROFILES AND ITS APPLICATION TO GAP [J].

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[9] P-N-P-N TRANSISTOR SWITCHES [J].

MOLL, JL ;

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[10] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

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