INPUT PROTECTION OF LOW-CURRENT DC AMPLIFIERS BY GAASP DIODES

被引：11

作者：

DAMLJANOVIC, D

ARANDJELOVIC, V

机构：

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1981年 / 14卷 / 04期

关键词：

D O I：

10.1088/0022-3735/14/4/005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：414 / 417

页数：4

共 25 条

[1] ANALYSIS OF EQUIVALENT-CIRCUIT WITH GATE PROTECTION IN MOS DEVICES [J].

AGATSUMA, T ;

ISHII, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :491-492

[2] C-MOS-SOS LSI INPUT-OUTPUT PROTECTION NETWORKS [J].

AHLPORT, BT ;

CRICCHI, JR ;

BARTH, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :933-938

[3]

BARKER RWJ, 1972, ELECTRON ENG, V44, P31

[4] LIGHT-EMITTING DIODES [J].

BERGH, AA ;

DEAN, PJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :156-+

[5] IMPROVED INPUT PROTECTION CIRCUIT FOR C-MOS-SOS ARRAYS [J].

COHEN, SH ;

CASWELL, GK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :926-932

[6] HYBRID PROTECTIVE DEVICE FOR MOS-LSI CHIPS [J].

DELAMONEDA, FH ;

DEBAR, DE ;

STUBY, KP ;

BERTIN, CL .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1976, 12 (03) :172-175

[7]

HAMITER LC, 1969, ELECTRONICS, V42, P106

[8] AN OVERLOAD PROTECTION CIRCUIT FOR CURRENT-FEEDBACK DC ELECTROMETERS [J].

KENNEDY, EJ .

NUCLEAR INSTRUMENTS & METHODS, 1967, 54 (01) :144-&

[9]

Kroeger J., 1974, Electronic Design, V22, P82

[10] GATE PROTECTION OF MIS DEVICES [J].

LENZLINGER, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (04) :249-+

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