HIGH-POWER DEPOSITION AND ANALYTICS OF AMORPHOUS-SILICON CARBIDE FILMS

被引：28

作者：

HEYNER, R

MARX, G

机构：

[1] Technical University Chemnitz-Zwickau, Department of Chemistry, O9009 Chemnitz

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

AMORPHOUS MATERIALS; GLOW DISCHARGE OPTICAL SPECTROSCOPY; PLASMA PROCESSING AND DEPOSITION; SILICON CARBIDE;

D O I：

10.1016/0040-6090(94)06363-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present work shows the investigations of a-SiC(N,O):H thin films produced by d.c. plasma-enhanced chemical vapor deposition under high power conditions. In contrast to the traditional process we use liquid precursors (hexamethyldisiloxane, hexamethyldisilazane) diluted in argon or nitrogen for decomposition in the glow discharge. Films were analysed by different methods with regards to their composition and structure (electron probe microanalysis, X-ray photoelectron spectroscopy, glow discharge optical emission spectroscopy, infrared spectroscopy).

引用

页码：14 / 20

页数：7

共 24 条

[1]

BOHM H, 1992, METALLOBERFLACHE, V46, P125

[2]

BONIFIELD TD, 1982, DEPOSITION TECHNOLOG

[3]

Bunshah R. F., 1982, DEPOSITION TECHNOLOG

[4] PLASMA ASSISTED DEPOSITION TECHNIQUES AND SYNTHESIS OF NOVEL MATERIALS [J].