SPECTROSCOPIC STUDY OF A DC DISCHARGE IN AN ARGON SILANE NITROGEN GAS-MIXTURE UNDER SILICON-NITRIDE THIN-FILM DEPOSITION CONDITIONS

被引：3

作者：

JAUBERTEAU, JL

DUCHESNE, D

GIRAULT, C

AUBRETON, J

CATHERINOT, A

机构：

[1] Equipe Thermodynamique et Plasmas, UA 320 CNRS, Limoges Cedex, 87060

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 1990年 / 10卷 / 04期

关键词：

Electric discharge; reactive ionized gases; silicon nitride; spectroscopic diagnostic; thin film deposition;

D O I：

10.1007/BF01447266

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A detailed experimental investigation of a D.C. discharge in an argon-silanenitrogen gas mixture is undertaken using mainly spatially resolved spectroscopy. Discharge parameters are studied as functions of the gas mixture composition, and the influence of nitrogen concentration on the dissociation phenomena of SiH4 and on dehydrogenation mechanisms of the growing film surface is particularly discussed. © 1990 Plenum Publishing Corporation.

引用

页码：589 / 607

页数：19

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