AN ACCURATE DESIGN METHOD OF BIPOLAR-DEVICES USING A TWO-DIMENSIONAL DEVICE SIMULATOR

被引：7

作者：

TOMIZAWA, M

KITAZAWA, H

YOSHII, A

HORIGUCHI, S

SUDO, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1148 / 1153

页数：6

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[7] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

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